From August 1st 2012, CCES has systematically investigated novel emerging phenomena of correlated electron materials.


New member announcement (2019, Jun)
We are glad to announce that we have a new member joining IBS CCES in June. June. 1, 2019 Shik SHIN (A...
Awardees of 2019 KPS Spring Meeting
We are happy to announce the awardees of 2019 KPS Spring Meeting. Outstanding Presentation Award (Poster session...
1st Annual ISSP & IBS-CCES Workshop / Opening Ceremony for ISSP-CCES Joint Research Lab (April 19, 2019)
The signing ceremony of the Memorandum of Understanding (MoU) between The Institute for Solid State Physics (ISSP)...

CCES Seminar CCES Seminar

Raman scattering studies on Sr2IrO4 thin films under epitaxial stress and strain
Prof. Ambrose Seo(University of Kentucky) 2019-06-14 16:00~
Mechanical Instability-driven Architecturing of Atomically-thin Materials
Prof. Sung Woo Nam(University of Illinois) 2019-06-10 14:00~

Selected Publications Selected Publications

Flexoelectricity is an electromechanical coupling between electrical polarization and a strain gradient1 that enables mechanical manipulation of polarization without applying an electrical bias2,3. Recently, flexoelectricity was directly demonstrated by mechanically switching the out-of-plane polarization of a uniaxial system with a scanning probe microscope tip3,4. However, the successful application of flexoelectricity in low-symmetry multiaxial ferroelectrics and therefore active manipulation of multiple domains via flexoelectricity have not yet been achieved. Here, we demonstrate that the symmetry-breaking flexoelectricity offers a powerful route for the selective control of multiple domain switching pathways in multiaxial ferroelectric materials. Specifically, we use a trailing flexoelectric field that is created by the motion of a mechanically loaded scanning probe microscope tip. By controlling the SPM scan direction, we can deterministically select either stable 71° ferroelastic switching or 180° ferroelectric switching in a multiferroic magnetoelectric BiFeO3 thin film. Phase-field simulations reveal that the amplified in-plane trailing flexoelectric field is essential for this domain engineering. Moreover, we show that mechanically switched domains have a good retention property. This work opens a new avenue for the deterministic selection of nanoscale ferroelectric domains in low-symmetry materials for non-volatile magnetoelectric devices and multilevel data storage.
The discovery of materials has often introduced new physical paradigms and enabled the development of novel devices. Two-dimensional magnetism, which is associated with strong intrinsic spin fluctuations, has long been the focus of fundamental questions in condensed matter physics regarding our understanding and control of new phases. Here we discuss magnetic van der Waals materials: two-dimensional atomic crystals that contain magnetic elements and thus exhibit intrinsic magnetic properties. These cleavable materials provide the ideal platform for exploring magnetism in the two-dimensional limit, where new physical phenomena are expected, and represent a substantial shift in our ability to control and investigate nanoscale phases. We present the theoretical background and motivation for investigating this class of crystals, describe the material landscape and the current experimental status of measurement techniques as well as devices, and discuss promising future directions for the study of magnetic van der Waals materials.
We investigate the hidden Berry curvature in bulk 2H-WSe2 by utilizing the surface sensitivity of angle resolved photoemission (ARPES). The symmetry in the electronic structure of transition metal dichalcogenides is used to uniquely determine the local orbital angular momentum (OAM) contribution to the circular dichroism (CD) in ARPES. The extracted CD signals for the K and K0 valleys are almost identical, but their signs, which should be determined by the valley index, are opposite. In addition, the sign is found to be the same for the two spin-split bands, indicating that it is independent of spin state. These observed CD behaviors are what are expected from Berry curvature of a monolayer of WSe2. In order to see if CD-ARPES is indeed representative of hidden Berry curvature within a layer, we use tight binding analysis as well as density functional calculation to calculate the Berry curvature and local OAM of a monolayer WSe2. We find that measured CD-ARPES is approximately proportional to the calculated Berry curvature as well as local OAM, further supporting our interpretation.
Topological semimetals host electronic structures with several band-contact points or lines and are generally expected to exhibit strong topological responses. Up to now, most work has been limited to non-magnetic materials and the interplay between topology and magnetism in this class of quantum materials has been largely unexplored. Here we utilize theoretical calculations, magnetotransport and angle-resolved photoemission spectroscopy to propose Fe3GeTe2, a van der Waals material, as a candidate ferromagnetic (FM) nodal line semimetal. We find that the spin degree of freedom is fully quenched by the large FM polarization, but the line degeneracy is protected by crystalline symmetries that connect two orbitals in adjacent layers. This orbital-driven nodal line is tunable by spin orientation due to spin–orbit coupling and produces a large Berry curvature, which leads to a large anomalous Hall current, angle and factor. These results demonstrate that FM topological semimetals hold significant potential for spin- and orbital-dependent electronic functionalities.